Published November 2012 | Version v1
Journal article

Pulsed electrodeposition and characterization of Bi2Te3−ySey films

  • 1. Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China)
  • 2. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

Description

Highlights: ► Bi2Te3−ySey films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi2Te3−ySey films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi2Te3−ySey films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi2Te3−ySey film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2012.07.036

Additional details

Identifiers

DOI
10.1016/j.materresbull.2012.07.036;
PII
S0025-5408(12)00567-3;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
47
Journal Issue
11
Journal Page Range
p. 3292-3295
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.