Pulsed electrodeposition and characterization of Bi2Te3−ySey films
Creators
- 1. Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China)
- 2. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)
Description
Highlights: ► Bi2Te3−ySey films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi2Te3−ySey films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi2Te3−ySey films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi2Te3−ySey film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.materresbull.2012.07.036Additional details
Identifiers
- DOI
- 10.1016/j.materresbull.2012.07.036;
- PII
- S0025-5408(12)00567-3;
Publishing Information
- Journal Title
- Materials Research Bulletin
- Journal Volume
- 47
- Journal Issue
- 11
- Journal Page Range
- p. 3292-3295
- ISSN
- 0025-5408
- CODEN
- MRBUAC
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45036527
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; FILMS; GRAIN SIZE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTROLYSIS; LYSIS; MATERIALS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SCATTERING; SIZE; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.