Published January 2006
| Version v1
Journal article
Development of large area imaging detector using thick CdTe layers grown by metalorganic vapor phase epitaxy
- 1. Nagoya Inst. of Technology, Graduate School of Engineering, Nagoya, Aichi (Japan)
Description
Growth characteristics and electronic properties of thick CdTe layers grown by metalorganic vapor phase epitaxy were studied for the application to large-area nuclear radiation imaging devices. High quality CdTe layers were grown on GaAs substrates above the thickness of 100 μm. Detection of γ-ray (60keV) from 241Am were confirmed with p-CdTe/n-CdTe/n+-GaAs diode detectors. Direct growth of high quality CdTe layers on Si substrates was also achieved. p-CdTe/n-CdTe/n+-Si diodes showed promising electronic properties for detector fabrication. (author)
Additional details
Publishing Information
- Journal Title
- Hoshasen
- Journal Volume
- 32
- Journal Issue
- 1
- Journal Page Range
- p. 3-9
- ISSN
- 0285-3604
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37052037
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- AMERICIUM 241; AUTORADIOGRAPHY; CADMIUM TELLURIDES; CHEMICAL RADIATION DETECTORS; COMPTON DIODE DETECTORS; FABRICATION; FOILS; GALLIUM ARSENIDES; GAMMA RADIATION; LAYERS; ORGANOMETALLIC COMPOUNDS; SEMICONDUCTOR DIODES; SUBSTRATES; VAPOR PHASE EPITAXY
- Descriptors DEC
- ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; AMERICIUM ISOTOPES; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EPITAXY; GALLIUM COMPOUNDS; HEAVY NUCLEI; IONIZING RADIATIONS; ISOTOPES; MEASURING INSTRUMENTS; NUCLEI; ODD-EVEN NUCLEI; ORGANIC COMPOUNDS; PNICTIDES; RADIATION DETECTORS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SPONTANEOUS FISSION RADIOISOTOPES; TELLURIDES; TELLURIUM COMPOUNDS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 7 refs., 12 figs., 1 tab.