Published 2019 | Version v1
Journal article

Study on sensitivity of EUV resist by using electron beam

  • 1. National Institutes for Quantum and Radiological Science and Technology, Takasaki Advanced Radiation Research Institute, Takasaki, Gunma (Japan)

Description

Although mass production of semiconductor elements by EUV lithography is going to begin, the performances of resists are still insufficient. Research and development based on radiation chemistry are required, but it is difficult for academic researchers to evaluate EUV resist performance because EUV lithography system is not easily available. Therefore, we are studying a method to predict EUV resist sensitivities by using electron beam. Electron beam is one of ionizing radiations as well as EUV and is widely used in nanofabrication. In this article, we describe the demonstration of the prediction method for overall exposure, and the application of the method for nanopatterning. (author)

Availability note (English)

Available from https://radiation-chemistry.org/kaishi/107pdf/107_03.pdf

Abstract (Japanese)

EUVリソグラフィによる半導体素子の量産が間近に迫っているが,EUVレジスト材料の性能は未だ不十分であり放射線化学の理解に基づいた研究開発が求められている.ところがEUV描画装置は非常に高価で世界的にも台数が限られているため,アカデミックの研究者はEUVレジストの性能評価すら難しい状況にある.我々はEUVと同じく電離放射線であり描画装置の普及している電子線(EB)に着目し,EBを用いてEUVレジストの性能を評価する手法の確立を目指している.本記事では全面露光に対する感度予測法の実証と,パターニング露光に対する感度予測法の応用について述べる.(著者)

Additional details

Additional titles

Original title (Japanese)
電子線を用いたEUVレジスト感度予測法の研究

Publishing Information

Journal Title
Hoshasen Kagaku (Online)
Journal Issue
no.107
Series
雑誌名:放射線化学
Journal Page Range
p. 3-8
ISSN
2188-0115

Optional Information

Notes
9 refs., 6 figs., 5 tabs.