Optically detected donor electron g shifts in ion-implanted ZnSe

In ion-implanted ZnSe the g value of the donor resonance is found to shift from the value observed in unimplanted material and this shift is accompanied by a broadening of the resonance line, which in some cases is asymmetric. The behaviour is explained in terms of the mixing of the donor wavefunction with that of defect centres lying within the donor volume. The model allows an estimate to be made of the defect concentration within the implanted layer. (author)