Published September 26, 2005 | Version v1
Journal article

Pseudospark electron beam as an excitation source for extreme ultraviolet generation

  • 1. Siemens AG Corporate Technology CT PS5, Paul-Gossen-Str. 100, Erlangen 91052 (Germany)
  • 2. Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, California 90089-0271 (United States)

Description

A xenon pseudospark device is used to generate energetic and intense electron beams (e-beams) that induce extreme ultraviolet (EUV) emission in the range of 11-17 nm. This e-beam-based EUV source is compact, and the device is of interest because it has potentially attractive EUV conversion efficiency and pulse energy requirement, with potential for long lifetime and high repetition-rate operation. The role of e-beam-induced inelastic electronic collisions is considered

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
87
Journal Issue
13
Journal Page Range
p. 131501-131501.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2005 American Institute of Physics