Published 2020 | Version v1
Book Metadata-only

Defect formation under electron and proton irradiation of devices based on 4H-SiC, GaN and Si

Creators

  • 1. FTI im. A.F. Ioffe, Sankt-Peterburg (Russian Federation)
  • 2. SPbGU, Sankt-Peterburg (Russian Federation)

Description

no abstract available

Part of:
International conference «PhysicA.SPb». Thesis of reports

Additional details

Additional titles

Original title (Russian)
Дефектообразование при электронном и протонном облучении приборов на основе 4H-SiC, GaN и Си

Publishing Information

Publisher
POLITEKh-PRESS
Imprint Place
Sankt-Peterburg (Russian Federation)
ISBN
978-5-7422-7050-8
Imprint Title
International conference #Left-Pointing Double Angle Quotation Mark#PhysicA.SPb#Right-Pointing Double Angle Quotation Mark#. Thesis of reports
Imprint Pagination
550 p.
Journal Page Range
p. 362-363

Conference

Title
International conference on PhysicA.SPb
Original Conference Title
Mezhdunarodnaya konferentsiya «FizikA.SPb»
Dates
19-23 Oct 2020
Place
Sankt-Peterburg (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
54098997
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
COMPARATIVE EVALUATIONS; ELECTRONS; GALLIUM NITRIDES; IRRADIATION; PROTONS; RADIATION DOSES; RADIATION EFFECTS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
BARYONS; CARBIDES; CARBON COMPOUNDS; DOSES; ELEMENTARY PARTICLES; ELEMENTS; EVALUATION; FERMIONS; GALLIUM COMPOUNDS; HADRONS; LEPTONS; NITRIDES; NITROGEN COMPOUNDS; NUCLEONS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
3 refs. Imprint:Mezhdunarodnaya konferentsiya #Left-Pointing Double Angle Quotation Mark#FizikA.SPb#Right-Pointing Double Angle Quotation Mark#. Tezisy dokladov