Published 1988 | Version v1
Book Metadata-only

Cryogenic and room temperature measurements of niobium and niobium nitride on GaAs

Creators

  • 1. Naval Research Lab., Washington, DC (USA)

Description

The superconducting properties of Nb and NbN thin films deposited on n-type GaAs and the current-voltage characteristics of the resulting metal/semiconductor contact have been studied for various doping levels and deposition conditions of the metallization. In these devices Nb anodization or reactive ion etching has been used to define the area of the metal/semiconductor contact. The devices were tested from 4.2 K to 373 K and analyzed using the Schottky barrier field emission transport model. Good agreement with calculated tunneling parameters has been observed in some devices

Additional details

Publishing Information

Publisher
The Electrochemical Society.
Imprint Place
Pennington, NJ (USA)
Imprint Title
Low temperature electronics and high temperature superconductors. Volume 88-9
Journal Page Range
vp.

Conference

Title
Low temperature electronics and high temperature superconductors symposium.
Dates
19-23 Oct 1987.
Place
Honolulu, HI (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20031808
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALGORITHMS; CHEMICAL VAPOR DEPOSITION; CRYOGENICS; DOPED MATERIALS; ETCHING; GALLIUM ARSENIDES; ION IMPLANTATION; MATHEMATICAL MODELS; MEASURING METHODS; NIOBIUM NITRIDES; SCHOTTKY BARRIER DIODES; SUPERCONDUCTING FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; FILMS; GALLIUM COMPOUNDS; MATERIALS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS