Twofold gain enhancement by elongation of QDs in polarization preserving QD-SOAs
- 1. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, D-10623 Berlin (Germany)
Description
The impact of quantum dot (QD) elongation on key parameters of QD-based semiconductor optical amplifiers (SOAs) is investigated using a combination of 8-band -theory including strain and piezoelectricity up to second order and a rate equation model describing the population of QD ground, excited and wetting layer states. By considering columnar QDs of selected aspect ratios, we show that chip gain and saturation gain can be enhanced by up to +3.6 dB via an increased elongation of the individual QDs while retaining polarization preserving amplification and gain recovery times below 700 fs. Our results enable the optimization of polarization preserving QD-SOA devices which combine ultrafast gain recovery with high gain and low power consumption. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6641/ab1c06Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 34
- Journal Issue
- 7
- Journal Page Range
- [8 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52039110
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- AMPLIFIERS; ASPECT RATIO; BAND THEORY; ELONGATION; GAIN; LAYERS; OPTIMIZATION; PIEZOELECTRICITY; POLARIZATION; QUANTUM DOTS; REACTION KINETICS; SEMICONDUCTOR MATERIALS; STRAINS
- Descriptors DEC
- AMPLIFICATION; DEFORMATION; DIMENSIONLESS NUMBERS; ELECTRICITY; ELECTRONIC EQUIPMENT; EQUIPMENT; KINETICS; MATERIALS; NANOSTRUCTURES