Laser annealing of implanted GaAs

Using the methods of luminescence and Rutherford back scattering crystals of implanted GaAs, subjected to annealing by nanosecond pulses of ruby laser are investigated. It is ascertained that point implantation defects, penetrating, owing to their high mobility, into GaAs and far beyond the limits of the range subjected to direct effect of ion implantation (rendered amorphous), produce the determining effect on the properties of crystals produced by implantation and laser annealing as a result of reverse diffusion to the surface beyond crystallization front of laser remelted layer