Published March 2008 | Version v1
Journal article Metadata-only

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

Creators

  • 1. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)
  • 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 3. School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China)

Description

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2− defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]2− is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2− defects still exist in the films

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/3/062

Additional details

Identifiers

DOI
10.1088/0256-307X/25/3/062;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
3
Journal Page Range
p. 1034-1037
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44112724
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ANNEALING; ANNIHILATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON CYCLOTRON-RESONANCE; FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTROMETERS; PHOTOLUMINESCENCE; PLASMA; SILICON OXIDES; THIN FILMS; ULTRAVIOLET RADIATION
Descriptors DEC
CHALCOGENIDES; CHEMICAL COATING; CRYSTAL STRUCTURE; CYCLOTRON RESONANCE; DEPOSITION; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; HEAT TREATMENTS; INTERACTIONS; LUMINESCENCE; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; PHOTON EMISSION; RADIATIONS; RESONANCE; SILICON COMPOUNDS; SPECTROMETERS; SURFACE COATING