Published September 1997 | Version v1
Book

Studies of doping and high pressure effect on the electronic structure of Sr2TiO4

  • 1. SNBNCBS, Calcutta (India)
  • 2. Institute of Mathematical Sciences, Chennai (India)
  • 3. Department of Physics, Anna University, Chennai (India)

Description

The doping effect on the electronic structures of Sr2-x LaxTiO4 for various x values (x = 0.0,0.5,1.0,1.5,2.0) has been reported. Pressure induced insulator to metal transition is studied for Sr2TiO4 to understand the nature of metallization. The different pressure parameters have also been evaluated. The calculations clearly show that the metallization by doping is due to the addition of electrons in to the Ti-3d bands, whereas that by pressure is due to the overlap of O-2p with the Ti-3d bands. (author)

Part of:
Advances in high pressure science and technology: proceedings of the fourth national conference on high pressure science and technology

Additional details

Publishing Information

Publisher
Universities Press
Imprint Place
Hyderabad (India)
ISBN
81 7371 122 4
Imprint Title
Advances in high pressure science and technology: proceedings of the fourth national conference on high pressure science and technology
Imprint Pagination
351 p.
Journal Page Range
p. 309-314

Conference

Title
4. national conference on high pressure science and technology
Dates
11-13 Sep 1997
Place
Kalpakkam (India)

Optional Information

Notes
16 refs., 6 figs., 3 tabs.