Depth distribution of damage due to ionization
Description
The depth distribution of the damage due to ionization caused by heavy ion irradiation is calculated by the transport equation method previously used for the calculation of range and damage distributions. The calculation differs from Brice's chiefly in that it allows for the transport of energy by recoils away from the primary projectile path. Like the damage distribution, it should be more accurate than Brice's at low energies. It is found that a power-law limit of the ionization distribution can be constructed; thus one may take advantage of the simple scaling properties of power-law distributions. The importance of energy transport by recoils is examined for both ionization and damage distributions. A qualitative distinction between the ionization distribution and range or damage distributions is that the ionization distribution is discontinuous at the target surface. (This refers to the infinite target of the calculations, where the ''surface'' is merely a plane at which ion motion starts.) The differential-equation method of obtaining distributions from moments is generalized to allow inclusion of this discontinuity. (U.S.)
Additional details
Additional titles
- Augmented title (English)
- "5"6Fe, "2"8Si, "1"4N ions incident on "2"8Si
Publishing Information
- Publisher
- Plenum Publishing Corp.
- Imprint Place
- New York
- Imprint Title
- Atomic collisions in solids. Vol. 1
- Imprint Pagination
- p. 35-46.
Conference
- Title
- 3. international conference on atomic collisions in solids.
- Dates
- 23 Sep 1973.
- Place
- Gatlinburg, Tennessee, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6208373
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGED-PARTICLE TRANSPORT; COLLISIONS; ENERGY LOSSES; HEAVY IONS; IONIZATION; IRON IONS; KEV RANGE 01-10; KEV RANGE 10-100; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON IONS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; RADIATION EFFECTS; RADIATION TRANSPORT; SEMIMETALS
Optional Information
- Notes
- Imprint:See CONF-730958--P1.