Published August 10, 1993
| Version v1
Patent
Method of producing tungsten-titanium sputter targets and targets produced thereby
Description
A method is described for preparing a tungsten-titanium sputter target having substantially no β(Ti,W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering, comprising: (a) providing powders of said tungsten and titanium wherein said titanium powder is present in an amount of about 1-20 wt. % based on the total weight of said tungsten and titanium powders provided; (b) compacting said powders at a pressure of from about 200 to 1,000 MPa; and (c) heating said powders at a temperature from about 600-882 C. A method for preparing a tungsten-titanium sputtering target having substantially no β(Ti,W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering
Availability note (English)
Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (United States).Additional details
Publishing Information
- Imprint Pagination
- [10 p.].
- IPC:
- Int. Cl. C22C 27/04; B22F 1/00.
- IPC
- Int. Cl. C22C 27/04; B22F 1/00.
- Patent number
- US patent document 5,234,487/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25005343
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- COMPACTING; EMISSION; FABRICATION; HEATING; POWDERS; SPUTTERING; TARGETS; TITANIUM ALLOYS; TUNGSTEN ALLOYS
- Descriptors DEC
- ALLOYS
Optional Information
- Secondary number(s)
- US patent application 7-685,789.