Published August 10, 1993 | Version v1
Patent

Method of producing tungsten-titanium sputter targets and targets produced thereby

Description

A method is described for preparing a tungsten-titanium sputter target having substantially no β(Ti,W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering, comprising: (a) providing powders of said tungsten and titanium wherein said titanium powder is present in an amount of about 1-20 wt. % based on the total weight of said tungsten and titanium powders provided; (b) compacting said powders at a pressure of from about 200 to 1,000 MPa; and (c) heating said powders at a temperature from about 600-882 C. A method for preparing a tungsten-titanium sputtering target having substantially no β(Ti,W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering

Availability note (English)

Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (United States).

Additional details

Publishing Information

Imprint Pagination
[10 p.].
IPC:
Int. Cl. C22C 27/04; B22F 1/00.
IPC
Int. Cl. C22C 27/04; B22F 1/00.
Patent number
US patent document 5,234,487/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25005343
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
COMPACTING; EMISSION; FABRICATION; HEATING; POWDERS; SPUTTERING; TARGETS; TITANIUM ALLOYS; TUNGSTEN ALLOYS
Descriptors DEC
ALLOYS

Optional Information

Secondary number(s)
US patent application 7-685,789.