Published June 1986
| Version v1
Journal article
Electron properties of the layer semiconductor crystals of the A25B36 group
Description
The electron properties of the isostructural layer trigonal crystal of the A25B36 group - Bi2Te3 and Bi2Se3 have been comparatively studied. Results of the study are presented. The quasirelativistic band structure is obtained by the pseudopotential method. The influence of the layer structure on the energy bands is described. The coupling between atomic and crystal states in these crystals is obtained by the group theory and LCAO methods. The nature of certain groups of the bands and density of states in Bi2Te3 and Bi2Se3 are discussed
Additional details
Additional titles
- Original title (Russian)
- Электронные свойства слоистых полупроводниковых кристаллов группы А
Publishing Information
- Journal Title
- Ukr. Fiz. Zh.
- Journal Volume
- 31
- Journal Issue
- 6
- Series
- Ukr. Fiz. Zh.
- Journal Page Range
- 919-924
- ISSN
- 0503-1265
- CODEN
- UFIZA
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 18033769
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH SELENIDES; BISMUTH TELLURIDES; BRILLOUIN ZONES; ELECTRONIC STRUCTURE; ENERGY LEVELS; ENERGY-LEVEL DENSITY; GROUP THEORY; LAYERS; LCAO METHOD; TRIGONAL LATTICES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; MATHEMATICS; SELENIDES; SELENIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; ZONES
Optional Information
- Notes
- For English translation see the journal Ukrainian Physics Journal (USA).