Published November 2001 | Version v1
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Resonant Raman scattering off neutral quantum dots

  • 1. Abdus Salam International Centre for Theoretical Physics, Trieste (Italy)
  • 2. Centro de Estudios Aplicados al Desarrollo Nuclear, Havana (Cuba)
  • 3. Instituto de Cibernetica, Matematica y Fisica, Vedado, Havana (CU)
  • 4. Instituto de Materiales y Reactivos, Universidad de la Habana, Havana (CU)

Description

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate states. (author)

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Additional details

Publishing Information

Imprint Pagination
27 p.
Report number
IC--2001/150

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33012576
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
GALLIUM ARSENIDES; LASER RADIATION; QUANTUM MECHANICS; RAMAN EFFECT; RESONANCE SCATTERING
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INELASTIC SCATTERING; MECHANICS; PNICTIDES; RADIATIONS; SCATTERING

Optional Information

Notes
19 refs, 9 figs, 1 tab