Band-gap tuning and optical response of two-dimensional SixC1-x : A first-principles real-space study of disordered two-dimensional materials
Creators
- 1. Presidency University, Kolkata (India)
- 2. Ames Laboratory and Iowa State University, Ames, IA (United States)
- 3. University of Calcutta, Kolkata (India)
- 4. S. N. Bose National Center for Basic Sciences, Kolkata (India)
Description
We present a real-space formulation for calculating the electronic structure and optical conductivity of random alloys based on Kubo-Greenwood formalism interfaced with augmented space recursion technique formulated with the tight-binding linear muffin-tin orbital basis with the van Leeuwen–Baerends corrected exchange potential. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of two-dimensional honeycomb siliphene SixC1–x beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic structure and optical response over a wide energy range, and the results are discussed in the light of the available experimental and other theoretical data. As a result, our proposed formalism may open up a facile way for planned band-gap engineering in optoelectronic applications.
Availability note (English)
Available from http://www.osti.gov/pages/biblio/1379167; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 96
- Journal Issue
- 5
- Journal Page Range
- vp.
- ISSN
- 2469-9950
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 48102725
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APPROXIMATIONS; DIRAC APPROXIMATION; ELECTRONIC STRUCTURE; ENERGY GAP; MUFFIN-TIN POTENTIAL; SILICON CARBIDES; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; POTENTIALS; SILICON COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC02-07CH11358
- Funding organization
- USDOE (United States)
- Secondary number(s)
- IS-J--9436; OSTIID--1379167