Published 1974 | Version v1
Journal article Metadata-only

Low-temperature photoluminescence from boron ion implanted Si

Creators

  • 1. Illinois Univ., Urbana (USA). Coordinated Science Lab.

Description

no abstract available

Additional details

Identifiers

DOI
10.1080/00337577408232409;

Publishing Information

Journal Title
Radiation Effects
Journal Volume
21
Journal Issue
4
Series
Radiat. Eff.
Journal Page Range
225-228
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
5149414
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; BORON IONS; CATIONS; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; MEDIUM TEMPERATURE; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SILICON; SPECTRA; VACANCIES
Descriptors DEC
BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
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