Island structure growth and continuous film production criteria. 1. Weak atom sources

In the approximation of self-consistent average field growth of different geometry (sphere segment with arbitrary edge Θ, cylinder) islands under different atom transport mechanism is considered. In case of weak atom sources the mean islands radius R-bar(t) grows and their density N(t) decreases, the problem on continuous film production is defined by concurrence of atomic sources and transport processes in island film. Asymptotic time dependence for average film thickness d-bar, coefficient of substrate filling with Z islands, efficient filling coefficient Z are obtained. Criteria of change from island structure growth to continuous film growth regime (substrate overfilling with islands) are determined. As a particular case growth of hemispherical islands of radius R >> λS (λS (DSτS)1/2 - adsorbed atom diffusion length) in sufficiency dense inert gas medium when adsorbed atom diffusion fields are adjusted to vapor diffusion fields are considered. 18 refs.; 1 fig