The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition
- 1. Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026 (China)
- 2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029 (China)
Description
The La2Hf2O7 films have been deposited on Si (1 0 0) substrate by using pulsed laser deposition (PLD) method. X-ray diffraction (XRD) demonstrates that the as-grown film is amorphous and crystallizes after 1000 deg. C annealing. The interface structure is systematically studied by Synchrotron X-ray reflectivity (XRR), Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). Silicide, silicate and SiOx formations from interfacial reaction are observed on the surface of the Si substrate in the as-grown film. The impact of silicide formation on the electrical properties is revealed by capacitance-voltage (C-V) measurements. By post-deposition annealing (PDA), silicide can be effectively eliminated and C-V property is obviously improved.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.08.070Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.08.070;
- PII
- S0169-4332(09)01217-3;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 3
- Journal Page Range
- p. 838-841
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018269
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ENERGY BEAM DEPOSITION; FOURIER TRANSFORM SPECTROMETERS; HAFNIUM COMPOUNDS; INFRARED SPECTRA; INTERFACES; LANTHANUM COMPOUNDS; LASER RADIATION; OXYGEN COMPOUNDS; REFLECTIVITY; SILICON; SILICON OXIDES; SUBSTRATES; SURFACES; SYNCHROTRON RADIATION; THIN FILMS; X RADIATION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BREMSSTRAHLUNG; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; RARE EARTH COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS; SPECTROSCOPY; SURFACE COATING; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.