Published January 2013 | Version v1
Journal article

A reactive molecular dynamic simulation of oxidation of a silicon nanocluster

  • 1. Chinese Academy of Sciences, Institute of Process Engineering (China)
  • 2. Queen Mary, University of London, School of Engineering and Material Science (United Kingdom)

Description

This study presents an atomic level of molecular dynamic simulation of oxidation of silicon nanoparticle in use of a reactive force field (ReaxFF). The oxidation dynamics is revealed through the energy release, bond evolution and oxygen exchange processes. The oxidation is found to proceed in the manner of evolution of silicon–oxygen bond configuration, accompanied by the oxygen exchange process. The heat of reaction and the activation energy of the bond transformation process are also estimated, which indicates the capability of ReaxFF in the simulation of energetic materials.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Nanoparticle Research
Journal Volume
15
Journal Issue
1
Journal Page Range
p. 1-11
ISSN
1388-0764

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44058433
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ACTIVATION ENERGY; ATOMIC CLUSTERS; EVOLUTION; NANOSTRUCTURES; OXIDATION; OXYGEN; REACTION HEAT; SILICON; SIMULATION
Descriptors DEC
CHEMICAL REACTIONS; ELEMENTS; ENERGY; ENTHALPY; NONMETALS; PHYSICAL PROPERTIES; SEMIMETALS; THERMODYNAMIC PROPERTIES

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Copyright
Copyright (c) 2013 Springer Science+Business Media Dordrecht