Photoionization of DX-related traps in indium- and gallium-doped Cd1-xMnxTe

Persistent photoeffects have been observed in gallium- and indium-doped Cd1-xMnxTe. The kinetics of phototransients have been studied in indium-doped Cd0.9Mn0.1Te and in gallium-doped Cd0.99Mn0.01Te at 77 K, the temperature lower than the temperature for which the quenching of persistent photoeffects takes place for both materials. In both cases the phototransients were composed of two exponents with different time constants. Corresponding photoionization energies and Frank-Condon shifts have been determined with the help of the Jaros' model, assuming that the photoionized defect (DX center) is localized, strongly coupled to lattice vibrations. The results obtained confirm the large relaxation model of DX centers in gallium- and indium-doped Cd1-xMnxTe for both transitions