Published January 2006 | Version v1
Journal article

Hydrogen up-take in noble gas implanted W

  • 1. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  • 2. Japan Atomic Energy Research Institute, Takasaki, Gunma 370-12 (Japan)
  • 3. Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)

Description

Hydrogen accumulation in W crystal surface irradiated by noble gas ions was studied in connection with morphological and compositional changes. Noble gas ions such as He, Ne, Ar, Kr and Xe were implanted into W single crystals with energies of 10-380 keV up to doses of about 2 x 1022 ions/m2 at room temperature. Remarkable hydrogen retention was found for the He and Xe ion implanted layers where blisters and exfoliation were created. Tungsten oxides such as WO2 were formed along projected ranges of the implanted ions. Results indicated that the porous oxide surface layers play important role for dissociation of hydrogen, and hydrogen trapping is correlated with microstructural changes owing to formation of bubbles or clusters of implanted noble gas atoms

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.08.068;
PII
S0168-583X(05)01599-5;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
242
Journal Issue
1-2
Journal Page Range
p. 553-556
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on ion beam modification of materials
Dates
5-10 Sep 2004
Place
Pacific Grove, CA (United States)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.