Hydrogen up-take in noble gas implanted W
- 1. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
- 2. Japan Atomic Energy Research Institute, Takasaki, Gunma 370-12 (Japan)
- 3. Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)
Description
Hydrogen accumulation in W crystal surface irradiated by noble gas ions was studied in connection with morphological and compositional changes. Noble gas ions such as He, Ne, Ar, Kr and Xe were implanted into W single crystals with energies of 10-380 keV up to doses of about 2 x 1022 ions/m2 at room temperature. Remarkable hydrogen retention was found for the He and Xe ion implanted layers where blisters and exfoliation were created. Tungsten oxides such as WO2 were formed along projected ranges of the implanted ions. Results indicated that the porous oxide surface layers play important role for dissociation of hydrogen, and hydrogen trapping is correlated with microstructural changes owing to formation of bubbles or clusters of implanted noble gas atoms
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.08.068;
- PII
- S0168-583X(05)01599-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 242
- Journal Issue
- 1-2
- Journal Page Range
- p. 553-556
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on ion beam modification of materials
- Dates
- 5-10 Sep 2004
- Place
- Pacific Grove, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068513
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BLISTERS; BUBBLES; DISSOCIATION; DOSES; HELIUM IONS; HYDROGEN; IRRADIATION; KEV RANGE 10-100; KEV RANGE 100-1000; LAYERS; METALS; MONOCRYSTALS; POROUS MATERIALS; RARE GASES; RETENTION; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRAPPING; TUNGSTEN OXIDES; XENON IONS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELEMENTS; ENERGY RANGE; FLUIDS; GASES; IONS; KEV RANGE; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.