Published February 3, 2014
| Version v1
Journal article
Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions
Creators
- 1. NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)
Description
This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs
Additional details
Identifiers
- DOI
- 10.1063/1.4864311;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 5
- Journal Page Range
- p. 051118-051118.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45104636
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS; TUNNEL EFFECT
- Descriptors DEC
- EFFICIENCY; GALLIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC