Structure and growth mechanism of ZnSe nanowires
Creators
- 1. Department of Chemical, Materials and Biomolecular Engineering, 191 Auditorium Road, University of Connecticut, Storrs-06269, Connecticut (United States)
- 2. Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, TN (India)
- 3. Department of Chemical Engineering and Materials Science, 421 Washington Ave. SE, University of Minnesota, Minneapolis-55455, Minnesota (United States)
- 4. Electrical Engineering Division, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA (United Kingdom)
- 5. Laboratorio Nazionale TASC-INFM, Area Science Park, 34012 Trieste (Italy)
Description
ZnSe nanowires were grown onto Mo transmission electron microscopy (TEM) grids by MBE by suitably varying the growth parameters. In situ and high-resolution TEM studies were carried out to understand the structure, defects, and growth mechanism of this nanowire. The nanowire morphology is very sensitive to the growth parameters involved. Twin boundaries are the most commonly occurring defects in the nanowires grown under Zn-rich condition and catalytic gold particles of irregular shape are observed along the nanowire body. In the course of in situ heating the shape of the nanowire tip is observed to change at ∼178 deg. C. Definite growth of the nanowire starts at ∼235 deg. C. The diameter of the grown nanowire is almost equal to that of the catalyst gold particle present at the tip of the nanowire. In situ experimental observation and available phase-diagram information strongly suggests that nanowire growth should be possible with a solid catalyst particle though it does not rule out the possibility of the existence of a VLS mechanism
Additional details
Identifiers
- DOI
- 10.1063/1.2977722;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 6
- Journal Page Range
- p. 064302-064302.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40056895
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CATALYSTS; CRYSTAL GROWTH; GOLD; HEATING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PARTICLES; PHASE DIAGRAMS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIAGRAMS; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; INFORMATION; MATERIALS; METALS; MICROSCOPY; NANOSTRUCTURES; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics