Published December 1988 | Version v1
Journal article

Growth and characterization of Hg/sub l-x/Cd/sub x/Te photochemical native oxides

  • 1. Stanford Electronics Labs., Stanford, CA (USA)
  • 2. Hewlett-Packard Optoelectronics Div., San Jose, CA (USA)

Description

The authors report results on the growth of Hg/sub 1-x/Cd/sub x/Te native oxides using ultraviolet radiation. This method provides a dry, clean, low-temperature process for growing native oxides on Hg/sub 1-x/Cd/sub x/Te. Measurements of the stoichiometry and thicknesses of these oxides are presented and possible growth mechanisms discussed. The stoichiometry of the oxide/Hg/sub 1-x/Cd/sub x/Te interface after annealing is examined with regard to the encapsulation properties of these layers. Preliminary results obtained for high-temperature photochemical oxidation are also reported

Additional details

Publishing Information

Journal Title
Journal of the Electrochemical Society
Journal Volume
135
Journal Issue
12
Series
J. Electrochem. Soc.
Journal Page Range
3076-3080
ISSN
0013-4651
CODEN
JESOA