Published December 1988
| Version v1
Journal article
Growth and characterization of Hg/sub l-x/Cd/sub x/Te photochemical native oxides
Creators
- 1. Stanford Electronics Labs., Stanford, CA (USA)
- 2. Hewlett-Packard Optoelectronics Div., San Jose, CA (USA)
Description
The authors report results on the growth of Hg/sub 1-x/Cd/sub x/Te native oxides using ultraviolet radiation. This method provides a dry, clean, low-temperature process for growing native oxides on Hg/sub 1-x/Cd/sub x/Te. Measurements of the stoichiometry and thicknesses of these oxides are presented and possible growth mechanisms discussed. The stoichiometry of the oxide/Hg/sub 1-x/Cd/sub x/Te interface after annealing is examined with regard to the encapsulation properties of these layers. Preliminary results obtained for high-temperature photochemical oxidation are also reported
Additional details
Publishing Information
- Journal Title
- Journal of the Electrochemical Society
- Journal Volume
- 135
- Journal Issue
- 12
- Series
- J. Electrochem. Soc.
- Journal Page Range
- 3076-3080
- ISSN
- 0013-4651
- CODEN
- JESOA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20055713
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CADMIUM TELLURIDES; CRYSTAL GROWTH; HIGH TEMPERATURE; INTERFACES; LOW TEMPERATURE; MERCURY; OXIDATION; OXIDES; PHOTOCHEMISTRY; STOICHIOMETRY; THICKNESS; ULTRAVIOLET RADIATION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; CHEMISTRY; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; METALS; OXYGEN COMPOUNDS; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS