Published August 2010 | Version v1
Miscellaneous Metadata-only

First modification of silicon wafer resistivity distribution by the Selective Neutron Transmutation Doping

Creators

  • 1. Heavy Ion Laboratory, University of Warsaw, Warsaw (Poland)

Description

no abstract available

Part of:
Annual Report 2009

Additional details

Identifiers

URL
http://www.slcj.uw.edu.pl/pl/reports/HIL-Report09.pdf;

Publishing Information

Imprint Place
Warsaw (Poland)
Imprint Title
Annual Report 2009
Imprint Pagination
86 p.
Journal Page Range
p. 59-61
ISSN
1895-6726

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
41096217
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract, Progress Report, Non-conventional Literature
Descriptors DEI
CAPTURE; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; NEUTRON BEAMS; NEUTRON REACTIONS; PROGRESS REPORT; SI SEMICONDUCTOR DETECTORS; SILICON
Descriptors DEC
BARYON REACTIONS; BEAMS; DOCUMENT TYPES; ELECTRICAL PROPERTIES; ELEMENTS; HADRON REACTIONS; MEASURING INSTRUMENTS; NUCLEAR REACTIONS; NUCLEON BEAMS; NUCLEON REACTIONS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS

Optional Information

Notes
4 refs., 2 figs.