Published June 1988 | Version v1
Journal article Metadata-only

Influence of Ar+ implantation on electronic states of real silicon surface

Creators

  • 1. Moskovskij Gosudarstvennyj Univ. (USSR). Fizicheskij Fakul'tet

Description

The creation of the surface electronic states caused by Ar+ ion implantation in high resistance silicon has been investigated. It has been shown that the implantation dose above 1011 ion/cm2 gives rise to a strong increase of the concentration of the capture centers localized both at the interface (fast state) and in the surface oxide layer (slow states). The slow states have an adsorption nature

Additional details

Additional titles

Original title (Russian)
Влияние имплантации ионами Ар

Publishing Information

Journal Title
Poverkhn.: Fiz., Khim., Mekh.
Journal Issue
no.6
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
19104255
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON IONS; CHARGE CARRIERS; ELECTRONIC STRUCTURE; ION IMPLANTATION; KEV RANGE 10-100; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SURFACE PROPERTIES
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS