A focused MeV heavy ion beam line for materials modification and microanalysis

A beam line to focus a MeV heavy ion beam has been developed by combining a focusing system with a tandem-type accelerator. A beam spot size of 4 μmx4 μm for carbon or gold ion beams is achieved with an energy range of 0.5-3 MeV. This enables us both maskless MeV ion implantation and in-situ microanalysis using heavy ions in a single system. Maskless MeV implantation of gold ions into a silicon substrate is demonstrated, and microanalysis of the implanted areas is performed by secondary electron and RBS mapping images using 3 MeV C2+ beams. (orig.)