Damage formation- and annealing-effect by Si ion implantation into crystalline Si

Self-ion implantation into crystalline Si was performed. Energy is 150 keV, beam current is 2 - 50 μA/25 cm2, and dose is 1014 - 1016/cm2. The implantation damage was measured by the channeling Rutherford backscattering method. The effect of the dose rate and the wafer temperature on the damage level was investigated. The temperature dependence of critical dose rate PSIsub(c) was obtained, PSIsub(c)=(Dsub(vo)/π.rsub(d)4) exp (-Esub(a)/kT). This relation is deduced from a model of the defects diffusion from a cylindrical damage region. Pre-exponential factor of the diffusion coefficient Dsub(vo)=1.63x10-14 cm2/sec, cylinder radius rsub(d)=3.9 A, activation energy Esub(a)=0.23 eV were determined with experimental results. (author)