Published 1979
| Version v1
Book
Depth-analysis of defects in the surface layer by means of glancing scattering of MeV ions
Creators
- 1. Nagoya Univ. (Japan). Faculty of Engineering
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Inst. of Electr. Eng. of Japan.
- Imprint Place
- Tokyo, Japan
- Imprint Title
- Proceedings of the third symposium on ion sources and application technology
- Journal Page Range
- p. 223-225.
Conference
- Title
- 3. symposium on ion sources and application technology.
- Dates
- 19 - 22 Feb 1979.
- Place
- Tokyo, Japan.
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 11539273
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data, No Abstract
- Descriptors DEI
- ARGON IONS; ATOMIC IONS; CRYSTAL DEFECTS; DEPTH; DOSE RATES; EV RANGE 100-1000; EXPERIMENTAL DATA; GERMANIUM; GRAPHS; HELIUM IONS; IMPURITIES; ION BEAMS; IRRADIATION; LAYERS; SCATTERING; SPATIAL DISTRIBUTION
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; DATA FORMS; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; EV RANGE; INFORMATION; IONS; METALS; NUMERICAL DATA
Optional Information
- Notes
- Published in summary form only.