Microheterogeneity and extended defects in CdxHg1-xTe crystals

Conditions, enabling identification of etching figures of dislocation nature on CMT crystals through chemical etching are determined. It is shown that tellurium microinclusions, the concentration whereof is reliably determined through selective etching at point with expressly increased etching figure density are available in CMT crystals, grown by the Bridgeman method out of stoichiometric melts. The methodology for removing the tellurium inclusions, enabling combination of thermotreatment with continuous visual control of dislocation defect behaviour, is developed.11 refs., 9 figs., 3 tabs