Single-crystal growth and low temperature properties of the itinerant antiferromagnet Cr11B2

We report the preparation and low temperature properties of the itinerant antiferromagnet Cr11B2. Large single crystals were grown by means of optical float-zoning, where the feed rods were prepared in a solid state reaction using high purity Cr and B powder in a bespoke tungsten crucible. 10B depleted boron was used to permit detailed neutron scattering studies. The crystal grown has the highest residual resistivity ratio reported to date in the literature of 31 and 11 for current along the crystallographic c- and a-directions, respectively. Measurements of the low temperature specific heat, magnetization and electrical resistivity are consistent with SDW type antiferromagnetic order below TN = 88 K, which is remarkably insensitive to large applied magnetic fields.