Published May 31, 2007 | Version v1
Journal article

Photoelectrical properties of In/n-CuIn5Se8 Schottky barriers

  • 1. Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, Minsk, 220013 (Belarus)
  • 2. State Polytechnic University, Polytekhnicheskaya 29, 195251 St-Petersburg (Russian Federation)
  • 3. A.F.Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St-Petersburg (Russian Federation)
  • 4. Institute of Physics of Solids and Semiconductors of the Academy of Sciences of Belarus, P. Brovka str. 17, 220072 Minsk (Belarus)
  • 5. Universidad Autonoma de Madrid, 28049 Madrid (Spain)

Description

CuIn5Se8 homogeneous crystals of n-type conductivity have been grown. Donor centers activation energy has been estimated. In/n-CuIn5Se8 Schottky barriers have been created and the first spectral dependencies of quantum efficiency of photoconversion of these structures have been derived. The nature of interband optical transitions has been interpreted and the band gap values for direct and indirect transitions in CuIn5Se8 crystals have been determined on the results of analysis of the Schottky barriers photoactive edge absorption. A possibility of utilization of CuIn5Se8 crystals in wide-band photoconverters of the optical radiation has been established

Additional details

Identifiers

DOI
10.1016/j.tsf.2006.12.075;
PII
S0040-6090(06)01592-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
15
Journal Page Range
p. 5763-5766
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
EMRS 2006 Symposium O on thin film chalcogenide photovoltaic materials
Dates
29 May - 2 Jun 2006
Place
Nice (France)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.