Published August 2001
| Version v1
Journal article
Annealing temperature dependence of photoluminescence from silicon-rich silica films
- 1. Suzhou Univ. (China). Dept. of Physics
Description
The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4-luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at rom temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed
Additional details
Publishing Information
- Journal Title
- Plasma Science and Technology
- Journal Volume
- 3
- Journal Issue
- 4
- Journal Page Range
- p. 891-895
- ISSN
- 1009-0630
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 33014688
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; FILMS; ION BEAMS; PHOTOLUMINESCENCE; SILICA; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; HEAT TREATMENTS; LUMINESCENCE; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SCATTERING; SILICON COMPOUNDS; SILICON OXIDES