Published February 1991
| Version v1
Journal article
Self-limiting adsorption of SiCl2H2 and its application to the layer-by-layer photochemical process
Creators
- 1. Nippon Telegraph and Telephone Corp., Atsugi Kanagawa (Japan). LSI Labs.
Description
Adsorption of SiCl2H2 on the Ge(100) clean surface is investigated by X-ray photoelectron spectroscopy and thermal desorption spectrum measurement. It is concluded that the adsorption is self-limiting at temperatures below 350degC, and that the surface is reactivated by synchrotron radiation. The sequential processes of self-limiting adsorption of SiCl2H2 and synchrotron radiation are promising for development of Si atomic layer epitaxy. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics, Part 2
- Journal Volume
- 30
- Journal Issue
- 2,A
- Series
- Jpn. J. Appl. Phys., Part 2.
- Journal Page Range
- L209-L211
- ISSN
- 0021-4922
- CODEN
- JAPLD
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 22074210
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ADSORPTION; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; DESORPTION; EPITAXY; EXPERIMENTAL DATA; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACE COATING; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BREMSSTRAHLUNG; DATA; DEPOSITION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; INFORMATION; NUMERICAL DATA; RADIATIONS; SEMIMETALS; SPECTROSCOPY