Alternative long-ranged charge optimized many-body potential for aluminium
- 1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275 (China)
- 2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275 (China)
Description
A new COMB3 potential was developed for aluminium, which focuses on long-range interaction and phase transition. The potential was developed by fitting the equilibrium lattice properties of different phases and defects to ensure its transferability to general systems. The quality of the potential was tested in several problems and compared with the EAM potential as well as the published COMB3 potential, the effect of the cutoff method was studied in detail to demonstrate the necessity to extend the cutoff region. Systems of strong deformations along the Bain path, under a trigonal strain and with planar stacking faults were calculated and the present potential performed as well as the EAM potential. At last, a surface process that involves adsorption and diffusion was studied using the present potential. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-648X/aa9697Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 29
- Journal Issue
- 48
- Journal Page Range
- [10 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52046877
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; ALUMINIUM; DEFECTS; DEFORMATION; DIFFUSION; EQUILIBRIUM; INTERACTION RANGE; MANY-BODY PROBLEM; PHASE TRANSFORMATIONS; POTENTIALS; STACKING FAULTS; STRAINS; SURFACES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTANCE; ELEMENTS; METALS; SORPTION