Energy structure and electro-optical properties of organic layers with carbazole derivative
Creators
- 1. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga LV-1063 (Latvia)
- 2. Latvian Institute of Organic Synthesis, 21 Aizkraukles Str., Riga LV-1006 (Latvia)
- 3. Department of Organic Technology of Kaunas University of Technology, 19 Radvilenu Plentas, LT-50254 Kaunas (Lithuania)
Description
Phosphorescent organic light emitting diodes are perspective in lighting technologies due to high efficient electroluminescence. Not only phosphorescent dyes but also host materials are important aspect to be considered in the devices where they are a problem for blue light emitting phosphorescent molecules. Carbazole derivative 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole (TCz1) is a good candidate and has shown excellent results in thermally evaporated films. This paper presents the studies of electrical properties and energy structure in thin films of spin-coated TCz1 and thermally evaporated tris[2-(2,4-difluorophenyl)pyridine]iridium(III) (Ir(Fppy)3). The 0.46 eV difference of electron conduction level between TCz1 and Ir(Fppy)3 compounds was obtained from the cyclic voltammetry and photoconductivity measurements. Temperature modulated space charge limited current (TM-SCLC) method is used to measure the local trapping states for charge carrier in the energy gap. The TM-SCLC measurements for the system TCz1 + 8 wt.% Ir(Fppy)3 show a trapping state with the value of 0.4 eV which is comparable to the conduction level difference of these materials. It allows to conclude that Ir(Fppy)3 molecules act as electron traps in the TCz1 matrix and the TM-SCLC method is applicable to investigate dopants as trapping states. To show the trap effect, an organic light emitting diode was made where the electroluminescent layer was a spin-coated host-guest system of TCz1 with incorporated 8 wt.% Ir(Fppy)3. - Highlights: • Phosphorescent molecules work as electron traps in the matrix. • Space charge limit current can be used to investigate traps formed by dopant. • Electroluminescence was observed in solution processed thin film
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.12.031Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.12.031;
- PII
- S0040-6090(13)02095-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 556
- Journal Page Range
- p. 405-409
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47003425
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTROLUMINESCENCE; ENERGY GAP; EV RANGE; IRIDIUM; LAYERS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; ORGANIC MATTER; PHOTOCONDUCTIVITY; PYRIDINE; SPACE CHARGE; THIN FILMS; TRAPPING; VISIBLE RADIATION; VOLTAMETRY
- Descriptors DEC
- AZINES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; ENERGY RANGE; EVALUATION; FILMS; HETEROCYCLIC COMPOUNDS; LUMINESCENCE; MATERIALS; MATTER; METALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PLATINUM METALS; PYRIDINES; RADIATIONS; REFRACTORY METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.