Annealing effect of NiO/Co90Fe10 thin films: From bilayer to nanocomposite
Creators
- 1. Department of Electrical and Electronic Engineering, The University of Hong Kong (Hong Kong)
- 2. Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China)
- 3. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)
- 4. Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 402, Taiwan (China)
- 5. Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 (Canada)
Description
Highlights: • Field annealing modified the microstructure and magnetic properties of CoFe/NiO. • Low-temperature annealing affected the bilayers by reordering the crystallites. • High-temperature promoted interdiffusion and created a nanocomposite single layer. • Ni, Co, and Fe formed metallic dispersion in the oxide matrix of the nanocomposite. • Nanocomposites have isotropic magnetic properties while bilayers are anisotropic. - Abstract: Exchange-biased bilayers are widely used in the pinned layers of spintronic devices. While magnetic field annealing (MFA) was routinely engaged during the fabrication of these devices, the annealing effect of NiO/CoFe bilayers is not yet reported. In this paper, the transition from NiO/Co90Fe10 bilayer to nanocomposite single layer was observed through rapid thermal annealing at different temperatures under magnetic field. The as-deposited and low-temperature (90Fe10) structures. On the other hand, annealing at 623 K and 673 K resulted in nanocomposite single layers composed of oxides (matrix) and alloys (precipitate), due to grain boundary oxidization and strong interdiffusion in the NiO/CoFe and CoFe/SiO2 interfaces. The structural transition was accompanied by the reduction of grain sizes, re-ordering of crystallites, incensement of roughness, and reduction of Ni2+. When measured at room temperature, the bilayers exhibited soft magnetism with small room-temperature coercivity. The nanocomposite layers exhibited an enhanced coercivity due to the changes in the magnetization reversal mechanism by pinning from the oxides. At 10 K, the increased antiferromagnetic anisotropy in the NiO resulted in enhanced coercivity and exchange bias in the bilayers. The nanocomposites exhibited weaker exchange bias compared with the bilayers due to frustrated interfacial spins. This investigation on how the magnetic properties of exchange-biased bilayers are influenced by magnetic RTA provides insights into controlling the magnetization reversal properties of thin films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2018.07.018Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2018.07.018;
- PII
- S0375960118307618;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 382
- Journal Issue
- 39
- Journal Page Range
- p. 2886-2893
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51011662
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; ANNEALING; ANTIFERROMAGNETISM; COBALT; COERCIVE FORCE; GRAIN BOUNDARIES; GRAIN SIZE; IRON; LAYERS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIZATION; NANOCOMPOSITES; NICKEL IONS; NICKEL OXIDES; ROUGHNESS; SILICON OXIDES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; FILMS; HEAT TREATMENTS; IONS; MAGNETISM; MATERIALS; METALS; MICROSTRUCTURE; NANOMATERIALS; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SIZE; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.