Electric field effect on electronic structure of BN nanotubes: a first principles study
- 1. College of Mathematics and Physics, China University of Geosciences, Wuhan (China)
- 2. School of Physics and information Engineering Jianghan University, Wuhan (China)
Description
The electronic structure of BN nanotube under electric field was studied using first principles calculations based on density functional theory (DFT). The relaxed structures in the presence of an electric field show that the interlayer distance along tube axis varies irregularly. The energy band structure is shifted towards the lower energy level, and the band gap is decreased significantly for both armchair and zigzag nanotubes by applied electric field. Furthermore, for armchair nanotube, the band gap transition from indirect-to-direct is observed. It can be found that there is obvious difference in partial density of states (PDOS) between half left and half right sides of nanotube. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) indicate that the positive and negative charges are spatial separated along the nanotube axis with the effect of electric field, and thus this can be considered as a pure material PN junction without doping. (authors)
Additional details
Publishing Information
- Journal Title
- Journal of Atomic and Molecular Physics
- Journal Volume
- 29
- Journal Issue
- 2
- Journal Page Range
- p. 334-340
- ISSN
- 1000-0364
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 46127323
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BORON NITRIDES; DENSITY; DENSITY FUNCTIONAL METHOD; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY LEVELS; MOLECULAR ORBITAL METHOD; NANOTUBES; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING JUNCTIONS
- Descriptors DEC
- BORON COMPOUNDS; CALCULATION METHODS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; VARIATIONAL METHODS
Optional Information
- Notes
- 6 figs., 33 refs.