Published December 28, 1987
| Version v1
Journal article
Plasmon-phonon-assisted electron-hole recombination in silicon at high laser fluence
Creators
- 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
Description
We present both theoretical and experimental results in silicon which clearly demonstrate that at time scales of 20 to 40 ps, after the pump laser pulse and at fluences greater than 100 mJ/cm2, the carrier density of the electron-hole plasma drops for increasing fluence; this is not explained by Auger recombination. We show that this drop is specific to plasmon-phonon-assisted recombination, which naturally explains this behavior
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 51
- Journal Issue
- 26
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 2208-2210
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19035461
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CARRIER DENSITY; ELECTRON-HOLE DROPLETS; EXPERIMENTAL DATA; PHONONS; PHYSICAL RADIATION EFFECTS; PLASMONS; RECOMBINATION; SILICON; THEORETICAL DATA
- Descriptors DEC
- DATA; ELEMENTS; INFORMATION; NUMERICAL DATA; QUASI PARTICLES; RADIATION EFFECTS; SEMIMETALS