Published May 7, 2009 | Version v1
Journal article

Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

  • 1. Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China)

Description

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 ± 0.23 and 0.79 ± 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/42/9/095305

Additional details

Identifiers

DOI
10.1088/0022-3727/42/9/095305;
PII
S0022-3727(09)96583-4;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
42
Journal Issue
9
Journal Page Range
[5 p.]
ISSN
0022-3727
CODEN
JPAPBE