Superlattice-like Ge₈Sb₉₂/Ge thin films for high speed and low power consumption phase change memory application

The amorphous-to-crystalline transitions of superlattice-like Ge₈Sb₉₂/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge₈Sb₉₂(4 nm)/Ge(3 nm)]₇ thin films were fabricated to test and verify the switching speed and operation consumption