Examination of deformations due to precipitation of H ions during annealing of H-implanted thin Ag films

Surface deformation of low-temperature (15 K) H-implanted thin Ag films (≅ 70 nm) with fluences above 4x1017 H/cm2 (i.e. H/Ag ≅ 0.35) was observed by annealing at ≅ 100 K at a speed of ≅ 2 K/s. By TEM and SEM studies, one can identify this deformation with blister formation in the samples. Using the gas-driven blistering model and the stress-driven model, the following mechanism was proposed: By annealing, the H atoms dissolved in the host lattice at low temperature precipitate very rapidly at ≅ 100 K in the form of overpressurized microbubbles. This induces strong stress in the thin films and hence blistering. The application of the stress-driven model formula in this particular case leads to a satisfactory result. (orig.)