Published 2017
| Version v1
Book
Effects of oxygen pressure on structural and optical properties of pulsed laser deposited GeO2 thin films
- 1. Department of Physics, Malaviya National Institute of Technology Jaipur, J L N Marg, Jaipur-302017 (India)
- 2. Materials Research Centre, Department of Physics, Indian Institute of Science, Bangalore- 560 012 (India)
Description
The effects of oxygen pressure on the structural and optical properties of GeO2 thin films grown at 400°C on quartz substrates using pulsed laser deposition technique have been investigated. The films were characterized 102 using XRD, AFM, Raman and UV-Vis spectroscopy. XRD results reveal that the films exhibit the hexagonal GeO2 phase along (101) preferred orientation. AFM images show that the surface morphology of films drastically changes with oxygen pressure. An increase in transmittance and optical band gap is obtained with the variation in oxygen pressure. The effects of variation in oxygen pressure on growth of GeO2 thin films are discussed in detail. (author)
Additional details
Publishing Information
- Publisher
- CSIR-National Physical Laboratory
- Imprint Place
- New Delhi (India)
- Imprint Title
- Proceedings of the seventeenth international conference on thin films: abstracts
- Imprint Pagination
- 236 p.
- Journal Page Range
- p. 101-102
Conference
- Title
- 17. international conference on thin films
- Acronym
- ICTF-2017
- Dates
- 13-17 Nov 2017
- Place
- New Delhi (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52048066
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; DEPOSITION; GERMANIUM OXIDES; GRADED BAND GAPS; MORPHOLOGICAL CHANGES; STRUCTURAL CHEMICAL ANALYSIS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; FILMS; GERMANIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SCATTERING