Published April 2013 | Version v1
Journal article Metadata-only

Temperature-dependent resistive switching behavior in the structure of Au/Nb:SrTiO3/Ti

Creators

  • 1. Zhejiang Sci-Tech University, Department of Physics, Center for Optoelectronics Materials and Devices, Hangzhou (China)
  • 2. Zhejiang Sci-Tech University, Nanometer Measurement Lab, Hangzhou (China)
  • 3. Beijing University of Posts and Telecommunications, School of Science, Beijing (China)
  • 4. Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communication, Beijing (China)

Description

Au/Nb:SrTiO3/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.5 wt% Nb:SrTiO3 (NSTO) using rf-magnetron sputtering technique. Resistive switching properties at different temperature were investigated. The Ti/NSTO interface was ohmic contact, which indicated that the resistive switching behavior was attributed to Au/NSTO interface. The resistive switching behavior happened only at the temperature above 180 K, which was possibly caused by the increase of Schottky barrier height with the increase of temperature. The structure showed a semiconductor behavior at high-resistance state (HRS) and a metallic behavior at low-resistance state (LRS). The switching conduction mechanism of Au/NSTO/Ti device is primarily described as space-charge-limited conduction (SCLC) according to the electrical transport properties measurement. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-012-7541-y

Additional details

Identifiers

DOI
10.1007/s00339-012-7541-y;

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
111
Journal Issue
1
Series
Special issue: synchrotron radiation in art and archaeology
Journal Page Range
p. 303-308
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
44050963
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE TRANSPORT; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GOLD; INTERFACES; MONOCRYSTALS; NIOBIUM ADDITIONS; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SPUTTERING; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TITANIUM
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; NIOBIUM ALLOYS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; STRONTIUM COMPOUNDS; TEMPERATURE RANGE; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS