Transformation of the nonradiative recombination centers in structures with GaAs/AlGaAs quantum wells after their exposure to CF4 plasma with subsequent low-temperature annealing

In the present paper influence of a low-temperature (T < 450 deg C) annealing on photoluminescence (PL) from the GaAs/AlGaAs single quantum wells (QW's) structures, exposed to the low-energy CF4 plasma, is investigated. It is shown, then annealing at 160-300 deg C causes a decrease of the PL intensity from the QW's located in the near-surface plasma damaged region, while annealing at 350-450 deg C partly recovers PL intensity from these QW's. The diffusion activation energy of plasma-induced point defects, which act as nonradiative recombination centers, is estimated to be about 150 MeV, and activation energy of thermal annealing of these defects is found to be about 540 MeV