Published 1982 | Version v1
Journal article

Asymmetric dislocation/point-defect interactions and the modeling of void swelling

  • 1. Argonne National Lab., IL

Description

An internally consistent model has been developed for analyzing void swelling during irradiation. The model employs Wigner-Seitz cells around each type of sink, namely dislocation lines, voids, and grain boundaries. Uniform generation of vacancies and interstitials is accounted for, as is diffusion in response to both concentration and radial interaction field gradients. The cells are coupled by equating concentrations and current flows at their peripheries, for arbitrary densities of the various types of sinks. A procedure has been developed for obtaining the best radial interaction fields to replace the actual angularly dependent ones surrounding dislocations. Analytical theoretical support for the chosen value (-1/4 of the average of the square of the actual field) has been developed. Quantitative accuracy has been assessed by comparison with numerical studies employing full angular dependence. The predicted swelling-rate bias factor of approx. 50% is in excellent agreement with available swelling-rate data when one assumes that approx. 16% of the defects initially generated escape close-pair recombination within the cascade. Reasonable theoretical support exists for this survival fraction

Additional details

Publishing Information

Journal Title
Am. Soc. Test. Mater., Spec. Tech. Publ.
Journal Issue
no.782
Series
Am. Soc. Test. Mater., Spec. Tech. Publ.
ISSN
0066-0558

Conference

Title
11. international symposium on effects of radiation on materials, American Society for Testing and Materials.
Dates
28-30 Jun 1982.
Place
Scottsdale, AZ (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
15027443
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DISLOCATIONS; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SWELLING; VOIDS
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; LINE DEFECTS; RADIATION EFFECTS

Optional Information

Secondary number(s)
CONF-820628--.