GaN taper rods: Solid-phase synthesis, crystal defects, and optical properties
- 1. Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Description
Wurtzite GaN taper rods assembled from highly oriented nanoparticles were synthesized using NaNH2 and the as-synthesized GaOOH prismatic rods as reactants at 600 deg. C for 5 h. The lengths of the GaN taper rods are in the range of 4-6 μm and the diameters are about 0.5-1.5 μm. It was found that a slow heating rate (1 deg. C min-1) was beneficial to keeping the one-dimensional (1D) skeleton of GaN, otherwise only GaN nanoparticles were obtained with a quick heating rate (10 deg. C min-1). Selected area electron diffraction (SAED) patterns and high-resolution transmission electron microscopy (HRTEM) observations revealed that the GaN taper rods assembled from highly oriented nanoparticles and there were crystal defects in the GaN structure. The GaN taper rods displayed luminescence emission in the blue-violet region, which may be related to crystal defects. - Graphical abstract: Wurtzite GaN taper rods assembled from highly oriented nanoparticles were synthesized using NaNH2 and the as-synthesized GaOOH prismatic rods as reactants at 600 deg. C for 5 h. The lengths of the GaN taper rods are in the range of 4-6 μm and the diameters are about 0.5-1.5 μm. SAED patterns and HRTEM observations revealed that there were crystal defects in the GaN structure. The GaN taper rods displayed luminescence emission in the blue-violet region, which maybe related to crystal defects
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jssc.2008.06.002Additional details
Identifiers
- DOI
- 10.1016/j.jssc.2008.06.002;
- PII
- S0022-4596(08)00298-3;
Publishing Information
- Journal Title
- Journal of Solid State Chemistry
- Journal Volume
- 181
- Journal Issue
- 7
- Journal Page Range
- p. 1634-1641
- ISSN
- 0022-4596
- CODEN
- JSSCBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40009985
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRON DIFFRACTION; GALLIUM NITRIDES; HEATING RATE; LUMINESCENCE; NANOSTRUCTURES; OPTICAL PROPERTIES; PARTICLES; RODS; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; GALLIUM COMPOUNDS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.