Published 2007 | Version v1
Journal article

Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures

  • 1. Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg (Germany)
  • 2. Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

Description

We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature range between 4 K and room temperature. The results of a blue and a green emitting sample are discussed in context of reported diffusion lengths for InGaN/GaN quantum wells. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200673563

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
4
Journal Issue
1
Journal Page Range
p. 179-182
ISSN
1610-1634

Conference

Title
6. International symposium on blue laser and light emitting diodes (ISBLLED 2006)
Dates
15-19 May 2006
Place
Montpellier (France)

Optional Information

Notes
With 4 figs., 6 refs.. SICI: 1610-1634(200701)4:1<179::AID-PSSC200673563>3.0.TX;2-C