Published 2007
| Version v1
Journal article
Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures
Creators
- 1. Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg (Germany)
- 2. Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)
Description
We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature range between 4 K and room temperature. The results of a blue and a green emitting sample are discussed in context of reported diffusion lengths for InGaN/GaN quantum wells. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200673563Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Conferences
- Journal Volume
- 4
- Journal Issue
- 1
- Journal Page Range
- p. 179-182
- ISSN
- 1610-1634
Conference
- Title
- 6. International symposium on blue laser and light emitting diodes (ISBLLED 2006)
- Dates
- 15-19 May 2006
- Place
- Montpellier (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 38014133
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE CARRIERS; DIFFUSION; DIFFUSION LENGTH; EMISSION SPECTRA; ENERGY SPECTRA; ENERGY-LEVEL DENSITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; PHOTOLUMINESCENCE; QUANTUM WELLS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; VISIBLE SPECTRA
- Descriptors DEC
- DIMENSIONS; DISTRIBUTION; ELECTRON MICROSCOPY; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LENGTH; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- With 4 figs., 6 refs.. SICI: 1610-1634(200701)4:1<179::AID-PSSC200673563>3.0.TX;2-C