Photoelectric effects in indium-doped PbTe

Galvanomagnetic and oscillation effects in monocrystal PbTe(In) with stabilized Fermi level at luminiscenting samples cooled up to T=4.2 K by a thermal radiation source are investigated. It is stated that growth of electron concentration in the conductivity zone (Δn> or approximately 108 cm-3) takes place at T* >50 K temperature of the source that may be followed by increase of the alloy resistance. It is shown that kinetics of slow swelling signal of photoconductivity (PC) reflects the process of establishing photoeXcitation uniform by the volume in the crystal. In this case life time taU of non-equilibrium electrons at T=4.2 K approach approximately 105 s. Heating the sample up to approximately 20 K results in rapid extinction of residual conductivity